• DocumentCode
    861459
  • Title

    Photoluminescence in InP hydrogenated by plasma exposure

  • Author

    Sugino, T. ; Boonyasirikool, A. ; Shirafuji, J. ; Hashimoto, H.

  • Author_Institution
    Dept. of Electr. Eng., Fac. of Eng., Osaka Univ., Japan
  • Volume
    25
  • Issue
    9
  • fYear
    1989
  • fDate
    4/27/1989 12:00:00 AM
  • Firstpage
    590
  • Lastpage
    591
  • Abstract
    Hydrogenation of an InP surface has been achieved by hydrogen plasma. Exposure in the limited temperature range 95-100 degrees C gives rise to a remarkable enhancement of the photoluminescence (PL) intensity by a factor of 5.4 compared with that of unexposed InP. On the other hand, a reduction in the PL intensity occurs at temperatures a little higher than 100 degrees C which leads to surface damage owing to preferential dissociation of phosphorus from the surface of InP. It is confirmed by secondary ion mass spectroscopy (SIMS) that hydrogen with concentration of 1*1018 cm-3 diffuses into the bulk InP down to a depth of 300 nm.
  • Keywords
    III-V semiconductors; hydrogen; indium compounds; luminescence of inorganic solids; photoluminescence; secondary ion mass spectra; semiconductor doping; surface structure; 95 to 100 degC; H 2 plasma; III-V semiconductors; InP:H; SIMS; hydrogenation; photoluminescence; plasma exposure; secondary ion mass spectroscopy; surface damage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890401
  • Filename
    19798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=861459