DocumentCode
861460
Title
80 M sample/s low powered, high resolution comparator in radiation hard SOI-BiCMOS technology
Author
Wulleman, J.
Author_Institution
Interuniv. Inst. for High Energies, Vrije Univ., Brussels
Volume
32
Issue
7
fYear
1996
fDate
3/28/1996 12:00:00 AM
Firstpage
649
Lastpage
651
Abstract
This comparator is intended to be part of the front-end of a larger read-out chip to be used with particle detectors. Its demands are low power, high speed and a high resolution. The comparator is implemented in a radiation hard 0.8 μm SOI-SIMOX technology and offers us NMOS, PMOS, PJFET and NPN bipolar transistors plus two types of resistor and two types of capacitor. The comparator has a resolution of <500 μV, consumes 360 μW, is clocked at a fixed frequency of 40 MHz and has a sampling rate of 80 M sample/s
Keywords
BiCMOS integrated circuits; SIMOX; comparators (circuits); nuclear electronics; particle detectors; radiation hardening (electronics); 0.8 micron; 360 muW; 40 MHz; SOI-SIMOX technology; Si; comparator; fixed frequency clock; particle detectors; radiation hard SOI-BiCMOS technology; resolution; sampling rate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960443
Filename
491877
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