Title :
100°C 10 Gbit/s directly modulated InGaAsP DFB lasers with Ru-doped semi-insulating buried heterostructure
Author :
Iga, R. ; Kondo, Y. ; Takeshita, T. ; Kishi, K. ; Yuda, M.
Author_Institution :
NTT Photonics Labs, NTT Corp., Atsugishi, Japan
fDate :
3/2/2006 12:00:00 AM
Abstract :
A directly modulated 1.3 μm InGaAsP DFB laser with a simple buried structure using Ru-doped semi-insulating InP is presented. The high relaxation oscillation frequency of 10 GHz was obtained at 95°C. Clear eye openings under 10 Gbit/s direct modulation were achieved from 0 to 100°C.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical modulation; ruthenium; semiconductor lasers; 0 to 100 C; 1.3 micron; 10 GHz; 10 Gbit/s; InGaAsP; Ru-doped semi-insulating buried heterostructure; directly modulated DFB lasers; distributed feedback laser; relaxation oscillation frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20064255
