DocumentCode
861481
Title
GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm
Author
Wistey, M.A. ; Bank, S.R. ; Bae, H.P. ; Yuen, H.B. ; Pickett, E.R. ; Goddard, L.L. ; Harris, J.S.
Author_Institution
Solid State & Photonics Lab., Stanford Univ., CA, USA
Volume
42
Issue
5
fYear
2006
fDate
3/2/2006 12:00:00 AM
Firstpage
282
Lastpage
283
Abstract
Electrically pumped, C-band vertical cavity surface emitting lasers (VCSELs) grown on GaAs are reported for the first time. The VCSELs employed three GaInNAsSb quantum wells separated by GaNAs barriers. Pulsed lasing was observed at 1534 nm, in the ITU C-band, when cooled. These lasers exhibit the longest wavelength reported to date for electrically pumped VCSELs grown on GaAs substrates.
Keywords
III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; nitrogen compounds; optical pumping; quantum well lasers; semiconductor growth; semiconductor quantum wells; surface emitting lasers; 1534 nm; C-band lasers; GaInNAsSb quantum wells; GaInNAsSb-GaAs; GaNAs barriers; VCSEL; pulsed lasing; vertical cavity surface emitting lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20064455
Filename
1604865
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