• DocumentCode
    861485
  • Title

    Light Output Enhancement of InGaN Light-Emitting Diodes Grown on Masklessly Etched Sapphire Substrates

  • Author

    Lin, Hung-Cheng ; Lin, Ruo-Syuan ; Chyi, Jen-Inn ; Lee, Chia-Ming

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Jhongli
  • Volume
    20
  • Issue
    19
  • fYear
    2008
  • Firstpage
    1621
  • Lastpage
    1623
  • Abstract
    A maskless wet-etching method is used to prepare patterned sapphire substrates for enhancing the output power of InGaN light-emitting diodes (LEDs). Blue LEDs grown on the patterned sapphire substrates exhibit an output power of 24.9 mW, which is 19.4% higher than that of the devices grown on flat substrates. The uniformity of the optical and electrical properties of LEDs across a 2-in wafer is slightly improved as well.
  • Keywords
    III-V semiconductors; etching; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; Al2O3; InGaN; blue LED; light output enhancement; light-emitting diodes; maskless wet-etching method; output power; patterned sapphire substrates; Atomic force microscopy; Light emitting diodes; Optical surface waves; Power generation; Rough surfaces; Scanning electron microscopy; Substrates; Surface morphology; Surface roughness; Wet etching; GaN; InGaN; light-emitting diodes (LEDs); patterned sapphire;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2008.2002736
  • Filename
    4624603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=861485