DocumentCode
861504
Title
The effects of chemical etching on the charge collection efficiency of {111} oriented Cd0.9Zn0.1Te nuclear radiation detectors
Author
Wright, G. ; Cui, Y. ; Roy, U.N. ; Barnett, C. ; Reed, K. ; Burger, A. ; Lu, F. ; Li, L. ; James, R.B.
Author_Institution
Center for Photonic Mater. & Devices, Fisk Univ., Nashville, TN, USA
Volume
49
Issue
5
fYear
2002
fDate
10/1/2002 12:00:00 AM
Firstpage
2521
Lastpage
2525
Abstract
We report the effects of different etchants on the mobility-lifetime product (μτ) of cadmium zinc telluride (CZT). The μτ values were obtained via the Hecht relation. The effects of surface recombination were also investigated using photoconductivity measurements. Results were obtained for a {111} oriented CZT single crystal. We find that the surfaces behave differently after etching. Values for surface recombination rates for [111]A and [111]B surfaces can vary by up to two orders of magnitudes for the same etchant. This large variation in surface recombination rates affects the charge collection efficiency and detector performance. We report surface treatments that enhance the charge collection efficiency for [111]A and [111]B surfaces. Data describing the detector response for Am241 spectra current-voltage relationship, and bulk μτ values and surface recombination rates are shown for different etchants.
Keywords
carrier lifetime; carrier mobility; etching; semiconductor counters; surface recombination; 241Am spectra; Cd0.9Zn0.1Te; Cd0.9Zn0.1Te detector; Hecht relation; [111]A surface; [111]B surface; charge collection efficiency; chemical etching; etchants; mobility-lifetime product; photoconductivity; surface recombination; surface treatment; Cadmium compounds; Chemicals; Etching; Radiation detectors; Rough surfaces; Spontaneous emission; Surface morphology; Surface roughness; Surface treatment; Zinc;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.803852
Filename
1046779
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