• DocumentCode
    861504
  • Title

    The effects of chemical etching on the charge collection efficiency of {111} oriented Cd0.9Zn0.1Te nuclear radiation detectors

  • Author

    Wright, G. ; Cui, Y. ; Roy, U.N. ; Barnett, C. ; Reed, K. ; Burger, A. ; Lu, F. ; Li, L. ; James, R.B.

  • Author_Institution
    Center for Photonic Mater. & Devices, Fisk Univ., Nashville, TN, USA
  • Volume
    49
  • Issue
    5
  • fYear
    2002
  • fDate
    10/1/2002 12:00:00 AM
  • Firstpage
    2521
  • Lastpage
    2525
  • Abstract
    We report the effects of different etchants on the mobility-lifetime product (μτ) of cadmium zinc telluride (CZT). The μτ values were obtained via the Hecht relation. The effects of surface recombination were also investigated using photoconductivity measurements. Results were obtained for a {111} oriented CZT single crystal. We find that the surfaces behave differently after etching. Values for surface recombination rates for [111]A and [111]B surfaces can vary by up to two orders of magnitudes for the same etchant. This large variation in surface recombination rates affects the charge collection efficiency and detector performance. We report surface treatments that enhance the charge collection efficiency for [111]A and [111]B surfaces. Data describing the detector response for Am241 spectra current-voltage relationship, and bulk μτ values and surface recombination rates are shown for different etchants.
  • Keywords
    carrier lifetime; carrier mobility; etching; semiconductor counters; surface recombination; 241Am spectra; Cd0.9Zn0.1Te; Cd0.9Zn0.1Te detector; Hecht relation; [111]A surface; [111]B surface; charge collection efficiency; chemical etching; etchants; mobility-lifetime product; photoconductivity; surface recombination; surface treatment; Cadmium compounds; Chemicals; Etching; Radiation detectors; Rough surfaces; Spontaneous emission; Surface morphology; Surface roughness; Surface treatment; Zinc;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.803852
  • Filename
    1046779