Efficient Spin Detection Across the Hybrid Co/GaAs Schottky Interface

Author

Trypiniotis, T. ; Tse, D.H.Y. ; Steinmuller, S.J. ; Cho, W.S. ; Bland, J.A.C.

Author_Institution

Cavendish Lab., Cambridge Univ.

Volume

43

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

2872

Lastpage

2874

Abstract

The electron spin detection efficiency was studied across Co/GaAs structures using photoexcitation techniques. Two sets of samples were prepared where the substrate surface was pretreated by annealing prior to growth for the first set whereas for the second no annealing treatment was carried out. While, in the annealed sample, spin detection was observed, the nonannealed case showed no spin-dependent transport effects. This is attributed to the absence of a Schottky tunnel barrier to facilitate tunnelling through the interface, as the transport mechanism responsible for the spin filtering. Furthermore, it illustrates the influence of the interface quality on spin dependent transport processes for the general case of any FM electrode

Keywords

III-V semiconductors; annealing; cobalt; electron spin polarisation; ferromagnetic materials; gallium arsenide; photoexcitation; semiconductor-metal boundaries; tunnelling; Co-GaAs; annealing; electron spin detection; hybrid Co/GaAs Schottky interface; photoexcitation; spin filtering; transport mechanism; tunnelling; Annealing; Electrodes; Electrons; Gallium arsenide; Gas detectors; Iron; Pollution measurement; Spin polarized transport; Substrates; Surface contamination; Co; Schottky barriers; electron spin detection; electron spin transport; gallium arsenide; photoexcitation; tunnelling;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2007.893476

Filename

4202950