Title :
NPN and PNP GaInP/GaAs heterojunction bipolar transistors grown by MOCVD
Author :
Kawai, Hiroyuki ; Kobayashi, Takehiko ; Nakamura, F. ; Taira, K.
Author_Institution :
Sony Corp. Res. Center, Yokohama, Japan
fDate :
4/27/1989 12:00:00 AM
Abstract :
Both NPN and PNP heterojunction bipolar transistors were fabricated using the GaInP/GaAs system for the first time by MOCVD to investigate the band lineup of the GaInP/GaAs system. By comparing the collector current, current gain and offset voltage of the NPN and the PNP HBTs, most of the bandgap difference was found to be in the valence band.
Keywords :
III-V semiconductors; band structure; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; vapour phase epitaxial growth; GaInP-GaAs; HBTs; III-V semiconductors epitaxial growth; MOCVD; bandgap difference; collector current; current gain; heterojunction bipolar transistors; n-p-n devices; offset voltage; p-n-p devices; valence band;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890414
