DocumentCode
861634
Title
NPN and PNP GaInP/GaAs heterojunction bipolar transistors grown by MOCVD
Author
Kawai, Hiroyuki ; Kobayashi, Takehiko ; Nakamura, F. ; Taira, K.
Author_Institution
Sony Corp. Res. Center, Yokohama, Japan
Volume
25
Issue
9
fYear
1989
fDate
4/27/1989 12:00:00 AM
Firstpage
609
Lastpage
610
Abstract
Both NPN and PNP heterojunction bipolar transistors were fabricated using the GaInP/GaAs system for the first time by MOCVD to investigate the band lineup of the GaInP/GaAs system. By comparing the collector current, current gain and offset voltage of the NPN and the PNP HBTs, most of the bandgap difference was found to be in the valence band.
Keywords
III-V semiconductors; band structure; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; vapour phase epitaxial growth; GaInP-GaAs; HBTs; III-V semiconductors epitaxial growth; MOCVD; bandgap difference; collector current; current gain; heterojunction bipolar transistors; n-p-n devices; offset voltage; p-n-p devices; valence band;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890414
Filename
19811
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