Title :
AlGaAs/GaAs HBT with GaInAs cap layer fabricated by multiple-self-alignment process using one mask
Author :
Ota, Yoshiharu ; Hirose, Tatsuya ; Yanagihara, M. ; Ryoji, A. ; Kato, Toshihiko ; Inada, M.
Author_Institution :
Dev. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
4/27/1989 12:00:00 AM
Abstract :
An AlGaAs/GaAs HBT has been fabricated by introducing an n+-GaInAs cap layer to reduce the emitter contact resistivity and optimising a multiple self-alignment process using one mask. The HBT has a good high-frequency performance of fT=82 GHz and fmax=120 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; 82 to 120 GHz; AlGaAs/GaAs HBT; EHF; GaInAs-AlGaAs-GaAs; III-V semiconductors; MM-wave devices; SHF; emitter contact resistivity; heterojunction bipolar transistor; microwave device; millimetre wave operation; multiple-self-alignment process; n +-GaInAs cap layer; single mask process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890415
