Magnetization Reversal Technique of DyTbFeCo Films at Magnetic Field as Low as 1/6 of Coercivity Using a Stress-Induced Magnetic Anisotropy

Author

Yamada, Michiya ; Nakagawa, Shigeki

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol.

Volume

43

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

2346

Lastpage

2348

Abstract

A method to cause magnetization reversal in rare earth-transition metal (RE-TM) films at low magnetic field for perpendicular magnetic random access memory (MRAM) was demonstrated. The magnetic anisotropy was changed from perpendicular to in-plane in DyFeCo and TbDyFeCo films while the mechanical tensile stress is applied to the films. It is succeeded to cause magnetization reversal at low magnetic field as low as 1/6 of original coercivity of the film

Keywords

cobalt alloys; coercive force; dysprosium alloys; ferromagnetic materials; internal stresses; iron alloys; magnetic storage; magnetic thin films; magnetisation reversal; metallic thin films; perpendicular magnetic anisotropy; random-access storage; terbium alloys; DyTbFeCo; coercivity; magnetization reversal; mechanical tensile stress; perpendicular magnetic random access memory; rare earth-transition metal films; stress-induced magnetic anisotropy; Coercive force; Magnetic anisotropy; Magnetic fields; Magnetic films; Magnetization reversal; Magnetostriction; Optical films; Perpendicular magnetic anisotropy; Substrates; Tensile stress; Magnetic random access memory (MRAM); magnetization reversal; magnetostriction; rare earth-transition metal (RE-TM) alloy film;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2007.893323

Filename

4202973