• DocumentCode
    861902
  • Title

    AlSb/InAs HEMTs with high transconductance and negligible kink effect

  • Author

    Boos, J.B. ; Kruppa ; Park ; Molnar ; Bennett, B.R.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    32
  • Issue
    7
  • fYear
    1996
  • fDate
    3/28/1996 12:00:00 AM
  • Firstpage
    688
  • Lastpage
    689
  • Abstract
    AlSb/InAs HEMTs with a 200 nm gate length have been fabricated and exhibit a low-field source-drain resistance of 0.6 Ωmm, a transconductance as high as 1.3 S/mm, and an effective electron velocity of 3.5×107 cm/s. The HEMTs also have a negligible kink effect
  • Keywords
    III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; ohmic contacts; 1.3 S/mm; 200 nm; AlSb-InAs; AuGe-Ni-Pt-Au; Cr-Au; HEMTs; effective electron velocity; high transconductance; low-field source-drain resistance; negligible kink effect;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960408
  • Filename
    491903
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=861902