DocumentCode
861940
Title
Non-isothermal quasi-bidimensional energy balance model [HEMT]
Author
Lepaul, S. ; Aniel, F. ; Peymayeche, L. ; de Lustrac, Andre ; Bouillault, Frederic ; Adde, R.
Author_Institution
LGEP, CNRS, Gif-sur-Yvette
Volume
32
Issue
7
fYear
1996
fDate
3/28/1996 12:00:00 AM
Firstpage
692
Lastpage
694
Abstract
The self heating effect in ultrashort gate length high electron mobility transistors (HEMTs) is investigated. An original model is presented which accounts for both bidimensional heat transfer and quasi bidimensional energy balance carrier transport
Keywords
finite element analysis; heat transfer; high electron mobility transistors; semiconductor device models; thermal analysis; FEM; HEMT; bidimensional heat transfer; high electron mobility transistors; nonisothermal model; quasi bidimensional energy balance carrier transport; self heating effect; ultrashort gate length;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960418
Filename
491906
Link To Document