Title :
Electric field effect of SrTiO/sub 3//YBa/sub 2/Cu/sub 3/O/sub 7-x/ multilayers grown by all-MBE
Author :
Nakamura, T. ; Tokuda, H. ; Iiyama, M.
Author_Institution :
Syst. & Electron. R&D Center, Sumitomo Electr. Ind. Ltd., Osaka, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
Epitaxial SrTiO/sub 3//YBa/sub 2/Cu/sub 3/O/sub 7-x/ (STO/YBCO) multilayers for a superconducting field-effect transistor (SuFET) were fabricated by an ozone assisted Molecular Beam Epitaxy (MBE) method. To eliminate interdiffusion at the interface, we deposited high quality STO films at around 500/spl deg/C on YBCO films with clean surfaces. At this temperature, interdiffusion was negligible through in-situ Auger Electron Spectroscopy (AES). The electric field effect in a Ag/STO/YBCO device configuration also indicated the suppression of the interfacial layer between the STO and YBCO film.<>
Keywords :
Auger effect; barium compounds; chemical interdiffusion; field effect transistors; high-temperature superconductors; molecular beam epitaxial growth; strontium compounds; superconducting epitaxial layers; superconducting transistors; yttrium compounds; 500 C; Ag-SrTiO/sub 3/-YBa/sub 2/Cu/sub 3/O/sub 7/; Ag/STO/YBCO device; Auger electron spectroscopy; STO films; SrTiO/sub 3//YBa/sub 2/Cu/sub 3/O/sub 7-x/ multilayers; YBCO films; all-MBE; electric field; interdiffusion; interfacial layer; ozone assisted molecular beam epitaxy; superconducting field-effect transistor; Electrons; FETs; Molecular beam epitaxial growth; Nonhomogeneous media; Spectroscopy; Superconducting epitaxial layers; Superconducting films; Surface cleaning; Temperature; Yttrium barium copper oxide;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
