Title :
Temperature compensating bias circuit for GaAs HBT RF power amplifiers with stage bypass architecture
Author :
Jeon, J. ; Kim, Jung-Ho ; Kwon, Youngwoo
Author_Institution :
Sch. of Electr. Eng. & INMC, Seoul Nat. Univ., Seoul
Abstract :
The design of a temperature compensating bias circuit applicable to GaAs HBT radio frequency (RF) power amplifiers (PAs) is presented. It is developed by adding a simple voltage-compensation circuit to the existing base bias circuit. It is applied to a stage bypass RF PA and the experimental results show that the quiescent current (Q-current) remains nearly unchanged over a temperature range between -30-85degC, which markedly improves the linearity of the PA at low temperatures.
Keywords :
III-V semiconductors; compensation; heterojunction bipolar transistors; power amplifiers; power semiconductor devices; radiofrequency amplifiers; GaAs; gallium arsenide HBT RF power amplifiers; quiescent current; radio frequency power amplifiers; stage bypass RF PA architecture; temperature -30 C to 85 C; temperature compensating bias circuit design; voltage-compensation circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080769
