Electric field effect in Sm/sub 1-x/Ca/sub x/Ba/sub 2/Cu/sub 3/O/sub y/ bicrystal junctions

Author

Dong, Z.W. ; Matijasevic, V.C. ; Hadley, P. ; Shao, S.M. ; Mooij, J.E.

Author_Institution

Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands

Volume

5

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

2879

Lastpage

2882

Abstract

A three terminal device was fabricated by depositing a thin film of Ca-doped SmBa/sub 2/Cu/sub 3/O/sub y/ on a bicrystal SrTiO/sub 3/ substrate and then structuring a gate over the resulting junction. The channel shows RSJ-like Josephson junction behavior. By applying a voltage to the gate, a large electric field effect was observed. The largest field effect was observed in films where 30% of the Sm was replaced by Ca. The critical current of the junction was modulated 23% by the application of an electric field of 5/spl times/10/sup 5/ V/cm. This electric field is about 100 times smaller than the electric field necessary for the field effects observed in homogeneous films. The sign of the field effect is consistent with that expected for a carrier-depleted grain boundary region.<>

Keywords

Josephson effect; barium compounds; bicrystals; calcium compounds; electric field effects; high-temperature superconductors; samarium compounds; superconducting thin films; Ca-doped SmBa/sub 2/Cu/sub 3/O/sub y/; RSJ-like Josephson junction; Sm/sub 1-x/Ca/sub x/Ba/sub 2/Cu/sub 3/O/sub y/ bicrystal junctions; SmCaBa/sub 2/Cu/sub 3/O-SrTiO/sub 3/; SrTiO/sub 3/ substrate; carrier-depleted grain boundary; critical current; electric field; thin film; three terminal device; Electrodes; Grain boundaries; Physics; Samarium; Sputtering; Superconducting films; Superconducting materials; Superconductivity; Voltage; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.403193

Filename

403193