DocumentCode
862342
Title
Transistor performance of high-T/sub c/ three terminal devices based on carrier concentration modulation
Author
Joosse, K. ; Boguslavskij, Y.M. ; Vargas, L. ; Gerritsma, G.J. ; Rogalla, H.
Author_Institution
Fac. of Appl. Phys., Twente Univ., Enschede, Netherlands
Volume
5
Issue
2
fYear
1995
fDate
6/1/1995 12:00:00 AM
Firstpage
2883
Lastpage
2886
Abstract
Electric field effect devices and quasiparticle injection effect devices are good candidates for the realization of three terminal devices from high-T/sub c/ materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements.<>
Keywords
carrier density; field effect transistors; high-temperature superconductors; quasiparticles; superconducting transistors; carrier concentration modulation; electric field effect devices; fabrication; high-T/sub c/ materials; quasiparticle injection effect devices; three terminal devices; transistor; Charge carrier density; Current-voltage characteristics; Dielectrics and electrical insulation; Superconducting devices; Superconducting epitaxial layers; Superconducting materials; Superconductivity; Temperature; Voltage; Yttrium barium copper oxide;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/77.403194
Filename
403194
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