• DocumentCode
    862393
  • Title

    1/f noise of Sb-based p-channel HFETs

  • Author

    Kruppa, W. ; Boos, J. Brad ; Bennett, Brian R. ; Papanicolaou, N.A.

  • Author_Institution
    Naval Res. Lab., Washington, DC
  • Volume
    44
  • Issue
    19
  • fYear
    2008
  • Firstpage
    1155
  • Lastpage
    1157
  • Abstract
    The 1/f noise of antimonide-based p-channel HFETs has been measured for the first time. The devices are fabricated with an InAlSb/AlGaSb barrier and a strained In0.41Ga0.59Sb quantum-well channel, yielding a channel hole mobility of 1020 cm2/V s and a sheet density of 1.6 1012 cm−2. The low-frequency noise spectrum in the linear region has a pure 1/f slope with no generation-recombination component. The Hooge parameter, alphaH, varies between 3times10-4 and 9times10-3 depending on the gate bias.
  • Keywords
    1/f noise; aluminium compounds; antimony; circuit noise; gallium compounds; high electron mobility transistors; indium compounds; quantum wells; 1/f noise; InAlSb-AlGaSb; channel hole mobility; generation-recombination component; low-frequency noise spectrum; p-channel HFET; quantum-well channel; sheet density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20082135
  • Filename
    4625197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=862393