Spontaneous emission model of surface-emitting DFB semiconductor lasers

Author

Makino, Toshihiko

Author_Institution

Bell-Northern Research Ltd., Ottawa, Ont., Canada

Volume

29

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

4

Lastpage

22

Abstract

A general spontaneous emission model is developed for surface-emitting (SE) distributed feedback (DFB) semiconductor lasers. The frequency distribution of spontaneous emission noise below lasing threshold and the spontaneous emission rate in lasing operation are formulated by using a transfer matrix method combined with the Green´s function method. The effective linewidth enhancement factor is obtained from this model in terms of the elements of the transfer matrix. By way of example, the author applies the formulation to a standard SE DFB laser, and a SE λ/4-shifted DFB laser with a distributed Bragg reflector (DBR) mirror. In particular, the author analyzes the below-threshold spectrum, the threshold current density, the differential quantum efficiency, and the spectral linewidth of these lasers

Keywords

Green´s function methods; distributed feedback lasers; laser theory; semiconductor device models; semiconductor lasers; spectral line breadth; DBR mirror; Green´s function method; below-threshold spectrum; differential quantum efficiency; distributed Bragg reflector; effective linewidth enhancement factor; frequency distribution; lasing threshold; noise; spectral linewidth; spontaneous emission model; spontaneous emission rate; surface-emitting DFB semiconductor lasers; threshold current density; transfer matrix method; Distributed Bragg reflectors; Distributed feedback devices; Frequency; Laser feedback; Laser modes; Laser noise; Semiconductor device noise; Semiconductor lasers; Spontaneous emission; Surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.199240

Filename

199240