Theory of gain in quantum-wire lasers grown in V-grooves

Author

Citrin, D.S. ; Chang, Yia-Chung

Author_Institution

Max-Planck-Inst. fuer Festkorperforschung, Stuttgart, Germany

Volume

29

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

97

Lastpage

108

Abstract

Theoretical calculations of gain, refractive index change, differential gain, and threshold current for GaAs-AlGaAs quantum-wire lasers grown in V-shaped grooves are presented. The theoretical model is based on the density-matrix formalism with intraband relaxation, and the subband structure is calculated within the effective bond-orbital model. For the quantum-wire geometry treated, agreement with the observed subband spacings is found. Because of the small overlap of the optical field with the active region for a single quantum wire, lasing threshold is reached only when several subbands are filled

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser theory; semiconductor lasers; semiconductor quantum wires; GaAs-AlGaAs; V-grooves; active region; density-matrix formalism; differential gain; effective bond-orbital model; intraband relaxation; laser gain; lasing threshold; optical field; quantum-wire geometry; quantum-wire lasers; refractive index change; semiconductor growth; subband structure; threshold current; Bonding; Geometrical optics; Laser modes; Laser theory; Laser transitions; Optical refraction; Optical variables control; Quantum mechanics; Refractive index; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.199249

Filename

199249