Title :
A GaAs MESFET IC for optical multiprocessor networks
Author :
Crow, John D. ; Anderson, C.J. ; Bermon, S. ; Callegari, A. ; Ewen, John F. ; Feder, J.D. ; Greiner, J.H. ; Harris, E.P. ; Hoh, Peter D. ; Hovel, H.J. ; Magerlein, J.H. ; McKoy, T.E. ; Pomerene, A.T.S. ; Rogers, Dennis L. ; Scott, G.J. ; Thomas, M. ; Mulv
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
2/1/1989 12:00:00 AM
Abstract :
A GaAs, enhanced/depletion mode, self-aligned, refractory-gate, MESFET chip process and circuit family have been developed for the integration of fiber-optic data link functions (e.g. photodetection, amplification, clock recovery, and deserialization) on a single chip. These authors describe the process and present results on integrating a complete optical receiver, including the photodiode and clock recovery circuits, on one chip. The chip functions use over 2000 devices, and perform at 1-GB/s, while dissipating less than 300 mW of heat. This chip is the most complex high-performance optoelectronic integrated circuit reported to date
Keywords :
III-V semiconductors; Schottky gate field effect transistors; VLSI; digital integrated circuits; field effect integrated circuits; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical communication equipment; 1 Gbit/s; 300 mW; GaAs; GaAs MESFET IC; MESFET chip process; OEIC; VLSI; amplification; chip functions; circuit family; clock recovery circuits; complete optical receiver; deserialization; enhanced/depletion mode; integration of fiber-optic data link functions; optical multiprocessor networks; optoelectronic integrated circuit; photodetection; photodiode; power dissipation; refractory-gate; self-aligned; semiconductors; single chip; Clocks; Gallium arsenide; MESFET integrated circuits; Optical fiber devices; Optical fiber networks; Optical receivers; Optical refraction; Photodiodes; Photonic integrated circuits; Stimulated emission;
Journal_Title :
Electron Devices, IEEE Transactions on
