High speed current switching of homogeneous YBaCuO film between superconducting and resistive states

Author

Karasik, B.S. ; Milostnaya, I.I. ; Zorin, M.A. ; Elantev, A.I. ; Gol´tsman, Gregory N. ; Gershenzon, E.M.

Author_Institution

Moscow State Pedagogical Inst., Russia

Volume

5

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

3042

Lastpage

3045

Abstract

Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.<>

Keywords

barium compounds; high-temperature superconductors; superconducting switches; superconducting thin films; yttrium compounds; 1 to 2 ps; 80 GHz; YBaCuO; current amplitude; driving current; electron heating model; fast S-N stage; film resistance dynamic; high speed current switching; high temperature superconductors; optimized current controlling device; repetition rate; resistive state; subnanosecond stage; superconducting state; supercritical current pulse; switching time; Electrons; High temperature superconductors; Identity-based encryption; Microwave technology; Optical attenuators; Optical films; Phonons; Substrates; Superconducting films; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.403233

Filename

403233