Title :
Ohmic contact penetration and encroachment in GaAs/AlGaAs and GaAs FETs
Author :
Goronkin, Herb ; Tehrani, Saied ; Remmel, Tom ; Fejes, Peter L. ; Johnston, K.J.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
fDate :
2/1/1989 12:00:00 AM
Abstract :
Hypoeutectic AuGe/Ni ohmic contacts on GaAs and GaAs/AlGaAs were characterized by SEM, TEM, and energy dispersive X-ray analysis. The two main components of the contact were confirmed to be NiGeAs islands distributed in an Au-Ga alloy. The NiGeAs islands were larger and more evenly distributed on GaAs MESFETs than on GaAs/AlGaAs MODFETs. Vertical penetration was impeded but not halted by AlGaAs. Since the contacts did not melt during the alloying cycle, there was no lateral encroachment observed
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; germanium alloys; gold alloys; high electron mobility transistors; nickel; ohmic contacts; Au-Ga alloy; AuGe-Ni-AlGaAs-GaAs; AuGe-Ni-GaAs; EDAX; GaAs; GaAs-AlGaAs; HEMT; MESFETs; MODFETs; NiGeAs islands; SEM; TEM; alloying cycle; encroachment; energy dispersive X-ray analysis; hypoeutectic ohmic contacts; ohmic contact penetration; semiconductors; vertical penetration; Alloying; Contact resistance; Electrons; FETs; Gallium arsenide; Gold; HEMTs; MODFETs; Ohmic contacts; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
