Electron emission from direct bandgap heterojunction capacitors

Author

Kleine, John S. ; Qian, Qi-de ; Cooper, James A., Jr. ; Melloch, Michael R.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

36

Issue

2

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

289

Lastpage

299

Abstract

The rate of emission of electrons from an inversion layer at the interface between p-type GaAs and undoped Al_xGa_1-xAs (x=0.38) is measured using a transient capacitance technique at temperatures from 49.8 to 84.4 K and at various gate biases. A model based on physical mechanisms is developed that accurately describes the inversion charge leakage. The model parameters are adjusted within their limits of uncertainty to obtain the optimal fit of present theory to experiment. The fit results in estimation of δE_c=0.28 eV and tunneling effective mass m*=0.08 m^O, for Al_0.38Ga_0.62As. The model is used to predict the storage characteristics of similar devices with lower GaAs doping and with an alternate barrier material

Keywords

III-V semiconductors; capacitors; electron emission; gallium arsenide; semiconductor junctions; 49.8 to 84.4 K; GaAs-Al_0.38Ga_0.62As; direct bandgap heterojunction capacitors; electron emission; gate biases; inversion charge leakage; inversion layer; model; optimal fit of present theory; p-type GaAs; physical mechanisms; semiconductors; storage characteristics; temperatures; transient capacitance technique; Capacitance measurement; Capacitors; Effective mass; Electron emission; Gallium arsenide; Heterojunctions; Material storage; Photonic band gap; Temperature; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.19928

Filename

19928