• DocumentCode
    863076
  • Title

    A model for surface recombination velocity and lifetime of semiconductor lasers

  • Author

    Cole, J. Vernon ; Lee, Hong H.

  • Author_Institution
    Dept. of Comput. Eng., Florida Univ., Gainesville, FL, USA
  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • fDate
    2/1/1993 12:00:00 AM
  • Firstpage
    322
  • Lastpage
    326
  • Abstract
    A simple and powerful relationship is presented for estimating the lifetime of continuous-wave (CW) diode lasers. Accelerated aging tests can directly be translated into the relationship. A model for the surface recombination velocity is developed based on the physical and chemical phenomenon governing the change of the surface recombination velocity. This model, together with a criterion for no thermal runaway developed earlier, is used to arrive at the simple relationship. The relationship provides a physical basis for estimating the lifetime
  • Keywords
    carrier lifetime; laser theory; life testing; semiconductor device models; semiconductor lasers; CW diode lasers; accelerated aging tests; chemical phenomenon; lifetime; physical phenomenon; semiconductor lasers; surface recombination velocity; Atomic beams; Chemical lasers; Degradation; Kinetic theory; Laser modes; Life estimation; Lifetime estimation; Radiative recombination; Semiconductor lasers; Surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.199285
  • Filename
    199285