DocumentCode :
863076
Title :
A model for surface recombination velocity and lifetime of semiconductor lasers
Author :
Cole, J. Vernon ; Lee, Hong H.
Author_Institution :
Dept. of Comput. Eng., Florida Univ., Gainesville, FL, USA
Volume :
29
Issue :
2
fYear :
1993
fDate :
2/1/1993 12:00:00 AM
Firstpage :
322
Lastpage :
326
Abstract :
A simple and powerful relationship is presented for estimating the lifetime of continuous-wave (CW) diode lasers. Accelerated aging tests can directly be translated into the relationship. A model for the surface recombination velocity is developed based on the physical and chemical phenomenon governing the change of the surface recombination velocity. This model, together with a criterion for no thermal runaway developed earlier, is used to arrive at the simple relationship. The relationship provides a physical basis for estimating the lifetime
Keywords :
carrier lifetime; laser theory; life testing; semiconductor device models; semiconductor lasers; CW diode lasers; accelerated aging tests; chemical phenomenon; lifetime; physical phenomenon; semiconductor lasers; surface recombination velocity; Atomic beams; Chemical lasers; Degradation; Kinetic theory; Laser modes; Life estimation; Lifetime estimation; Radiative recombination; Semiconductor lasers; Surface emitting lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.199285
Filename :
199285
Link To Document :
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