• DocumentCode
    863087
  • Title

    Double-barrier resonant tunneling transport model

  • Author

    Hu, Yuming ; Stapleton, Shawn P.

  • Author_Institution
    Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • fDate
    2/1/1993 12:00:00 AM
  • Firstpage
    327
  • Lastpage
    339
  • Abstract
    A semiquantum transport model for electron transport in the resonant tunneling diode (RTD) is presented. The total electrons tunneling through the RTD are partitioned into two parts. The first is the coherent tunneling electrons, which do not experience any scattering except by the barriers during tunneling. These electrons are described by the damped resonant tunneling model. The second is the incoherent tunneling electrons, which are the electrons scattered in the quantum well by the phonons, impurities, etc. The hot electron distribution, which is characterized by the effective Fermi energy μe and electron temperature Te, is proposed to model the nonequilibrium distribution of the incoherent electrons in the well. The parameters μe and Te can be uniquely determined by applying the energy conservation law and the particle conservation law to the incoherent electrons in the well. The incoherent electrons play a major role in the operation of the RTD. The capacitance of the RTD is investigated, based on the model and Poisson´s equation. Extensive numerical results are presented
  • Keywords
    Fermi level; hot carriers; resonant tunnelling devices; semiconductor device models; tunnel diodes; Poisson´s equation; capacitance; coherent tunneling electrons; damped resonant tunneling model; double barrier; effective Fermi energy; electron scattering; electron temperature; electron transport; energy conservation law; hot electron distribution; impurities; incoherent tunneling electrons; nonequilibrium distribution; particle conservation law; phonons; quantum well; resonant tunneling diode; semiquantum transport model; Capacitance; Diodes; Electrons; Energy conservation; Impurities; Particle scattering; Phonons; Poisson equations; Resonant tunneling devices; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.199286
  • Filename
    199286