Dependence of high-speed properties on the number of quantum wells in 1.55 μm InGaAs-InGaAsP MQW λ/4-shifted DFB lasers

Author

Uomi, Kazuhisa ; Aoki, Masahiro ; Tsuchiya, Tomonobu ; Takai, Atsushi

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

29

Issue

2

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

355

Lastpage

360

Abstract

The dependence of intrinsic dynamic properties, such as relaxation oscillation frequency, damping K-factor, and spectral chirping under 10-Gb/s direct modulation, on the number of quantum wells is systematically investigated in 1.55-μm multiquantum-well λ/4-shifted distributed-feedback lasers. The theoretical and experimental results indicate that the dependence of the above three factors on the number of quantum wells is clearly explained by the linear gain saturation of the quantum-well lasers

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; laser theory; laser transitions; optical saturation; semiconductor lasers; 1.55 micron; 10 Gbit/s; III-V semiconductor; InGaAs-InGaAsP; InGaAs-InGaAsP MQW λ/4-shifted DFB lasers; damping K-factor; direct modulation; distributed-feedback lasers; high-speed properties; intrinsic dynamic properties; linear gain saturation; quantum wells; relaxation oscillation frequency; spectral chirping; Bandwidth; Chirp modulation; Damping; Equations; Frequency; Gain; Laser theory; Quantum well devices; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.199289

Filename

199289