Title :
Dependence of high-speed properties on the number of quantum wells in 1.55 μm InGaAs-InGaAsP MQW λ/4-shifted DFB lasers
Author :
Uomi, Kazuhisa ; Aoki, Masahiro ; Tsuchiya, Tomonobu ; Takai, Atsushi
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
2/1/1993 12:00:00 AM
Abstract :
The dependence of intrinsic dynamic properties, such as relaxation oscillation frequency, damping K-factor, and spectral chirping under 10-Gb/s direct modulation, on the number of quantum wells is systematically investigated in 1.55-μm multiquantum-well λ/4-shifted distributed-feedback lasers. The theoretical and experimental results indicate that the dependence of the above three factors on the number of quantum wells is clearly explained by the linear gain saturation of the quantum-well lasers
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; laser theory; laser transitions; optical saturation; semiconductor lasers; 1.55 micron; 10 Gbit/s; III-V semiconductor; InGaAs-InGaAsP; InGaAs-InGaAsP MQW λ/4-shifted DFB lasers; damping K-factor; direct modulation; distributed-feedback lasers; high-speed properties; intrinsic dynamic properties; linear gain saturation; quantum wells; relaxation oscillation frequency; spectral chirping; Bandwidth; Chirp modulation; Damping; Equations; Frequency; Gain; Laser theory; Quantum well devices; Quantum well lasers; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
