DocumentCode :
863132
Title :
Process issues and components for HTS digital integrated circuit fabrication
Author :
Marathe, A.P. ; Ludwig, F. ; Van Duzer, T. ; Lee, L.
Author_Institution :
California Univ., Berkeley, CA, USA
Volume :
5
Issue :
2
fYear :
1995
fDate :
6/1/1995 12:00:00 AM
Firstpage :
3135
Lastpage :
3138
Abstract :
An etch-back planarization technique has been developed to planarize SrTiO/sub 3/ insulating layers, which may be used in a YBCO IC process. Films of YBCO have been deposited on the planarized SrTiO/sub 3/ surface. Structural and electrical characterization of these films suggests that the planarized surface can support the growth of epitaxial, c-axis oriented YBCO films. Experiments to evaluate and compare coupling efficiency in YBCO and Nb thin film transformers are also described. Easy flux penetration in YBCO films may reduce the efficiency of transformer coupling below that found for Nb transformers. The current coupling for Nb transformers, as extracted from the SQUID threshold curves, was found to be high (M/L/spl sim/0.93). The coupling in YBCO transformers, as measured from the voltage modulation of bicrystal grain boundary junction SQUIDs, was found to be much lower (M/L/spl sim/0.75).<>
Keywords :
digital integrated circuits; etching; high-temperature superconductors; integrated circuit technology; superconducting integrated circuits; superconducting thin films; HTS digital ICs; HTSC films; SQUID threshold curves; SrTiO/sub 3/; SrTiO/sub 3/ insulating layers; YBCO IC process; YBCO thin film transformers; YBaCuO; bicrystal grain boundary junction SQUIDs; digital integrated circuit fabrication; epitaxial c-axis oriented YBCO films; etch-back planarization; flux penetration; transformer coupling; voltage modulation; Digital integrated circuits; Etching; Fabrication; High temperature superconductors; Insulation; Niobium; Planarization; Transformers; Transistors; Yttrium barium copper oxide;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/77.403256
Filename :
403256
Link To Document :
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