DocumentCode :
863139
Title :
Lasing mode behavior of a single-mode MQW laser injected with TM polarized light
Author :
Yasaka, Hiroshi ; Naganuma, Mitsuru
Author_Institution :
NTT Opto-electron. Labs., Kanagawa, Japan
Volume :
29
Issue :
2
fYear :
1993
fDate :
2/1/1993 12:00:00 AM
Firstpage :
361
Lastpage :
367
Abstract :
The lasing mode behavior of a multiple quantum well (MQW) distributed feedback (DFB) laser was measured when intensity-modulated orthogonally polarized transverse magnetic (TM) mode light was injected. The 3-dB bandwidth of the frequency response shows a trend different from that observed with conventional bias current modulation: at high bias currents, it decreases with increasing bias current. The maximum bandwidth of 3 dB was observed when the normalized bias current was 4, and it reached 16 GHz at this bias current. The gain saturation coefficients for the transverse electric (TE) and TM modes estimated from these results were ∈pE; 2.5×10-17 cm3 and ∈qE 5.7×10-18 cm3 for the TE mode, and ∈pM: 6.0×10-17 cm3 and ∈qM: 2.0×10-14 cm3 for the TM mode
Keywords :
distributed feedback lasers; laser modes; light polarisation; optical saturation; semiconductor lasers; 16 GHz; DFB laser; TE modes; TM polarized light; bandwidth; bias currents; distributed feedback; frequency response; gain saturation coefficients; intensity modulated orthogonally polarised light; lasing mode behavior; multiple quantum well; semiconductor laser; single-mode MQW laser; transverse electric modes; Bandwidth; Distributed feedback devices; Frequency response; Laser feedback; Laser modes; Optical polarization; Quantum well devices; Quantum well lasers; Saturation magnetization; Tellurium;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.199290
Filename :
199290
Link To Document :
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