Electrochemical C-V profiling of heterojunction device structures

Author

Seabaugh, Alan C. ; Frensley, William R. ; Matyi, Richard J. ; Cabaniss, George E.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

36

Issue

2

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

309

Lastpage

313

Abstract

Electrochemical capacitance-voltage profiles of multiple (In,Al) GaAs heterostructures have been measured and compared with the results of a numerical calculation of the apparent charge density based on a one-dimensional Poisson solver. The calculation, using layer thicknesses, dopings, and heterojunction band discontinuities obtained from MBE growth calibrations, is in overall agreement with the measured data. The largest discrepancy occurs between the expected and measured heterojunction band discontinuity. This difference is consistent with an electrolyte/semiconductor interface which is not planar on a scale comparable to the layer thickness

Keywords

III-V semiconductors; aluminium compounds; capacitance measurement; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor junctions; AlGaAs-GaAs; InGaAs-GaAs; MBE growth calibrations; capacitance-voltage profiles; charge density; dopings; electrochemical C-V profiling semiconductors; electrolyte/semiconductor interface; heterojunction band discontinuities; heterojunction device structures; layer thicknesses; numerical calculation; one-dimensional Poisson solver; Calibration; Capacitance measurement; Capacitance-voltage characteristics; Charge measurement; Current measurement; Density measurement; Gallium arsenide; Heterojunctions; Semiconductor device doping; Thickness measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.19930

Filename

19930