Title :
Light-emitting, formed-point-contact gallium arsenide and gallium arsenide-phosphide diodes
Author :
Kibler, L.U. ; Burrus, C.A.
fDate :
7/1/1964 12:00:00 AM
Keywords :
Broadcasting; Crystals; Frequency; Gallium arsenide; III-V semiconductor materials; Light emitting diodes; Luminescence; Semiconductor diodes; Voltage; Zinc;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1964.3135
