Title :
Improved performance of submicrometer-gate GaAs MESFETs with an Al 0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy
Author :
Hiruma, Kenji ; Mori, Mitsuhiro ; Yanokura, Eiji ; Mizuta, Hiroshi ; Takahashi, Susumu
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
2/1/1989 12:00:00 AM
Abstract :
Submicrometer-gate MESFETs were fabricated with a GaAs active layer and an AlxGa1-xAs buffer layer grown by metalorganic vapor-phase epitaxy. To investigate the effect of buffer layer composition on device performance, microwave FETs with GaAs and Al 0.3Ga0.7As buffer layers were compared. Electron Hall mobility in the n-GaAs active layer was found to be unaffected by the Al content or carrier concentration in the buffer layer. However, a considerable improvement in the maximum available gain to as much as 5.2 dB was obtained at 26.5 GHz for FETs with a p-Al0.3Ga0.7 As buffer layer; this was 1.5 dB higher than the gain obtained with a p-GaAs buffer layer. The improvement is due to a 20-30% reduction in both drain conductance and drain-gate capacitance
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; solid-state microwave devices; vapour phase epitaxial growth; 26.5 GHz; Al0.3Ga0.7As buffer layer; GaAs-Al0.3Ga0.7As; MESFETs; MOVPE; SHF; buffer layer composition; device performance; drain conductance; drain-gate capacitance; electron Hall mobility; maximum available gain; metal organic vapor phase epitaxy; metalorganic vapor-phase epitaxy; microwave FETs; performance; semiconductors; submicrometer-gate; Artificial intelligence; Buffer layers; Doping profiles; Epitaxial growth; Epitaxial layers; Gallium arsenide; Hall effect; MESFETs; Magnetooptic recording; Molecular beam epitaxial growth;
Journal_Title :
Electron Devices, IEEE Transactions on
