DocumentCode
863418
Title
Avalanche Photodiodes with Enhanced Ionization Rates Ratio: Towards a Solid State Photomultiplier
Author
Capasso, F.
Author_Institution
Bell Laboratories Murray Hill, New Jersey 07974
Volume
30
Issue
1
fYear
1983
Firstpage
424
Lastpage
428
Abstract
Recent results on a new class of low excess noise avalanche photodiodes (APDs) are discussed. A significant enhancement of the ionization rates ratio has been demonstrated in AlGaAs/GaAs superlattice and graded gap APDs. In addition two novel APDs where only electrons ionize (channeling and staircase APDs) have been disclosed. The staircase APD has lower bias voltage (5-10V) than conventional APDs and virtually noise free multiplication similarly to a phototube.
Keywords
Avalanche photodiodes; Charge carrier processes; Electrons; Gallium arsenide; Ionization; Photomultipliers; Photonic band gap; Solid state circuits; Superlattices; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1983.4332303
Filename
4332303
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