• DocumentCode
    863493
  • Title

    A 1.25-V micropower Gm-C filter based on FGMOS transistors operating in weak inversion

  • Author

    Rodriguez-Villegas, Esther ; Yúfera, Alberto ; Rueda, Adoracion

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., London, UK
  • Volume
    39
  • Issue
    1
  • fYear
    2004
  • Firstpage
    100
  • Lastpage
    111
  • Abstract
    This paper presents a novel linearized transconductor architecture working at 1.25 V in a 0.8-μm CMOS technology with very low power consumption. The special features of the floating-gate MOS (FGMOS) transistor are combined in weak and strong inversion leading to a simplified topology with fewer stacked transistors and a very low noise floor. The design methodology is thoroughly explained, together with the advantages and disadvantages of working with the FGMOS transistor. Furthermore, second-order effects arising from nonideal behavior of the device are analyzed and limits for the performance are established. Experimental results from a second-order low-pass/bandpass filter that was implemented using the transconductor show a tunability of over one and a half decades in the audio range, a dynamic range of over 62 dB, and a maximum power consumption of 2.5 μW. These results demonstrate the suitability of the FGMOS transistor for implementing analog continuous-time filters, while at the same time pushing down the voltage limits of process technologies and simplifying the circuit topologies to obtain significant power savings.
  • Keywords
    CMOS analogue integrated circuits; MOSFET; band-pass filters; circuit tuning; continuous time filters; integrated circuit design; low-pass filters; low-power electronics; 0.8 micron; 1.25 V; 1.25-V micropower Gm-C filter; 2.5 muW; CMOS technology; FGMOS transistors; analog continuous-time filters; audio range; circuit topologies; dynamic range; floating-gate MOS transistor; linearized transconductor architecture; low power consumption; noise floor; power savings; second-order low-pass/bandpass filter; stacked transistors; voltage limits; weak inversion; Band pass filters; CMOS technology; Design methodology; Dynamic range; Energy consumption; MOSFETs; Performance analysis; Topology; Transconductors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2003.820848
  • Filename
    1261292