DocumentCode
863559
Title
Oxidized Ta2O5/Si3N4 dielectric films on poly-crystalline Si for dRAMs
Author
Shinriki, Hiroshr ; Nishioka, Yasushiro ; Ohji, Yuzuru ; Mukai, Kiichiro
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
36
Issue
2
fYear
1989
fDate
2/1/1989 12:00:00 AM
Firstpage
328
Lastpage
332
Abstract
A dielectric film technology characterized by a novel multilayer structure formed by oxidation of Ta2O5/Si3 N4 films on polysilicon has been developed to realize high-density dRAMs. The dry oxidation of the Ta2O5/Si3N4 layers was performed at temperatures higher than 900°C. This film has a capacitance per unit area from 5.5 to 6.0 fF/ μm2, which is equivalent to that of a 6.0- to 6.5-nm-thick SiO2. The leakage current at an effective electric field of 5 MV/cm is less than 10-9 A/cm2. Under such an electric field, the extrapolated time to failure for 50% cumulative failure can be as high as 1000 years
Keywords
VLSI; capacitors; field effect integrated circuits; integrated memory circuits; metal-insulator-semiconductor devices; random-access storage; semiconductor technology; silicon compounds; tantalum compounds; 1000 y; 900 C; DRAM; MIS capacitors; Ta2O5-Si3N4 dielectric films; capacitance; dielectric film technology; dry oxidation; electric field; extrapolated time to failure; leakage current; multilayer structure; polycrystalline Si; polysilicon; temperatures; Capacitance; Capacitors; Dielectric films; High-K gate dielectrics; Nonhomogeneous media; Oxidation; Random access memory; Semiconductor films; Silicon; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.19933
Filename
19933
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