DocumentCode
863587
Title
Threshold Voltage Modulation Using 
Implantation Into Substrate for Ni Fully Silicided Gate/High-  implantation into a silicon substrate was demonstrated for an n-channel MOS with a nickel fully silicided gate electrode and a high-<i>k</i> gate dielectric. We have clarified the idea that a small part of the implanted nitrogen was activated and acted as a counter dope for a channel by secondary ion mass spectrometry analysis, spreading resistance analysis, and inverse modeling analysis of MOS capacitance-voltage characteristics. It was found that N<sub>2</sub> <sup>+</sup> implantation had an advantage over N<sup>+</sup> implantation for forming a shallow counter-dope layer because the nitrogen-nitrogen pair has large diffusion coefficient, which resulted in a steep profile of nitrogen in a substrate.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MOS integrated circuits; elemental semiconductors; high-k dielectric thin films; ion implantation; nitrogen; secondary ion mass spectra; silicon; high-k gate dielectric; inverse modeling analysis; nickel fully silicided gate electrode; nitrogen molecule ion implantation; secondary ion mass spectrometry analysis; silicided gate/high-k NMOS; silicon substrate; spreading resistance analysis; threshold voltage modulation; Ion implantation; MOS devices; nitrogen; silicon;</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fLanguage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>English</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Journal_Title</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Electron Device Letters, IEEE</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Publisher</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>ieee</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>ISSN</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>0741-3106</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Type</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>jour</h2></div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>DOI</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10.1109/LED.2008.2004416</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Filename</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>4625957</div></div>
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<div class='row g-0 align-items-center'><div class='col-12 col-md-3 fw-bold mb-2 mb-md-0'><span class='text-muted small'>Link To Document</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><a class='text-break' href='https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=863587' target='_blank' rel=)
https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=863587
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