Title :
An analytical quasi-saturation model for vertical DMOS power transistors
Author :
Lou, K.H. ; Liu, C.M. ; Kuo, J.B.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
3/1/1993 12:00:00 AM
Abstract :
Current analytical models for vertical DMOS power transistors do not provide accurate explanation of quasi-saturation phenomenon. An analytical quasi-saturation model for vertical DMOS power transistors considering a nonuniform electron distribution in the n-epi region is described. As verified by the PISCES results, the quasi-saturation model provides a much better explanation of DMOS quasi-saturation behaviour than the previous model
Keywords :
insulated gate field effect transistors; power transistors; semiconductor device models; PISCES results; n-epi region; nonuniform electron distribution; quasi-saturation model; vertical DMOS power transistors; Analytical models; Councils; Doping; Electrons; Power transistors; Scattering; Semiconductor process modeling; Switches; Switching circuits; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
