Comment, on "A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon" [with reply]

For the original article see ibid., vol.36, no.9, p.1773-82 (1989). The commenters show that, contrary to the calculations in the above-titled paper by R. Jayaraman and C.G. Sodini, the correlated noise power spectra of number and surface mobility fluctuations in n-channel MOSFETs are functions of the relative densities of the positive and neutral traps at the Si-SiO/sub 2/ interface. The authors, along with B.J. Gross, disagree with the commenters´ assessment and support their calculations. The contend that the distribution of active traps assumed by the commenters is not representative of the distribution active in real MOSFET devices.<>