Field-extended field-effect transistors in 0.25-eV bandgap HgCdTe

Author

Wadsworth, Mark Vogel ; Gooch, W. Roland

Author_Institution

Texas Instruments Inc., Dallas, TX, USA

Volume

40

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

487

Lastpage

492

Abstract

A novel FET structure for use with 0.25-eV bandgap HgCdTe is described. The device, known as the field-extended field-effect transistor (FEFET), incorporates additional electrodes to control the surface electric field at the perimeter of the metallurgical diodes comprising the source and the drain of the transistor. Surrounding the metallurgical diodes with field-induced inversion regions improves the FEFET avalanche breakdown and subthreshold leakage characteristics as compared to standard MISFETs fabricated in HgCdTe. The FEFET is particularly attractive for switching applications or other uses requiring a high drain-to-source bias and a gate bias near the threshold potential

Keywords

II-VI semiconductors; cadmium compounds; energy gap; insulated gate field effect transistors; mercury compounds; narrow band gap semiconductors; 0.25 eV; FEFET; FET structure; HgCdTe; MISFETs; additional electrodes; avalanche breakdown; bandgap; drain-to-source bias; field-extended field-effect transistor; field-induced inversion regions; gate bias; semiconductors; subthreshold leakage characteristics; surface electric field; Avalanche breakdown; Breakdown voltage; Electrodes; FETs; Leakage current; MISFETs; Photonic band gap; Semiconductor diodes; Subthreshold current; Temperature measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.199351

Filename

199351