Numerical analysis of kink effect in HJFET with a heterobuffer layer

Author

Kunihiro, Kazuaki ; Yano, Hitoshi ; Goto, Norio ; Ohno, Yasuo

Author_Institution

NEC Corp., Ibaraki, Japan

Volume

40

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

493

Lastpage

497

Abstract

The kink effect in an AlGaAs/GaAs HJFET with a heterobuffer layer is investigated using a two-dimensional device simulator with impact ionization and deep-trap models. It is confirmed that the accumulation of holes generated by impact ionization causes the kink effect. The influence of deep levels on the kink characteristics is also investigated. The kink effect is suppressed by electron traps in the channel region through the recombination of the generated holes. On the other hand, the kink effect is enhanced by hole traps, which are positively ionized by increases in hole concentration. However, excessive hole trap concentration suppresses the accumulation of holes, due to enhanced recombination with electrons. Under such conditions the kink effect vanishes

Keywords

III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; hole traps; junction gate field effect transistors; semiconductor device models; AlGaAs-GaAs; HJFET; accumulation of holes; deep levels; deep-trap models; electron traps; heterobuffer layer; hole traps; impact ionization; kink characteristics; kink effect; semiconductors; submicron JFET; two-dimensional device simulator; Charge carrier processes; Electron traps; Gallium arsenide; Impact ionization; Insulation; Numerical analysis; Numerical simulation; Poisson equations; Spontaneous emission; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.199352

Filename

199352