Dependence of ionization current on gate bias in GaAs MESFETs

Author

Canali, Claudio ; Neviani, Andrea ; Tedesco, Carlo ; Zanoni, Enrico ; Centronio, A. ; Lanzieri, Claudio

Author_Institution

Fac. di Ingegneria, Modena Univ., Italy

Volume

40

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

498

Lastpage

501

Abstract

The nonmonotonic behavior of gate current I_g as a function of gate-to-source voltage V_gs is reported for depletion-mode double-implant GaAs MESFETs. Experiments and numerical simulations show that the main contribution to I_g (in the range of drain biases studied) comes from impact-ionization-generated holes collected at the gate electrode, and that the bell shape of the I_g(V_gs) curve is strongly related to the drop of the electric field in the channel of the device as V_gs is moved towards positive values

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hot carriers; semiconductor device models; MESFETs; bell shape; depletion-mode; double-implant; gate current; gate-to-source voltage; hot electrons; impact-ionization-generated holes; ionization current dependence; nonmonotonic behavior; numerical simulations; semiconductors; Breakdown voltage; Current measurement; Diodes; Electrodes; Gallium arsenide; Impact ionization; Implants; Irrigation; MESFETs; Numerical simulation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.199353

Filename

199353