A CMOS subbandgap reference circuit with 1-v power supply voltage

Author

Doyle, J. ; Lee, Young Jun ; Kim, Yong-Bin ; Wilsch, H. ; Lombardi, F.

Author_Institution

Nat. Semicond. Inc., Longmont, CO, USA

Volume

39

Issue

1

fYear

2004

Firstpage

252

Lastpage

255

Abstract

A CMOS subbandgap reference circuit with 1-V supply voltage is described. To obtain subbandgap reference voltages with a 1-V supply voltage, threshold voltage reduction and subthreshold operation techniques are used. Large ΔV_BE (100 mV) as well as a 90-dB operational amplifier are used to circumvent the amplifier offset. A power-on-reset (POR) circuit is used as startup. This circuit has been implemented using a standard 0.5-μm CMOS process, and its size is 940 μm×1160μm. The temperature coefficient is 17 ppm from -40°C to 125°C after resistor trimming and the minimum power supply voltage is 0.95 V. The measured total current consumption is below 10 μA and the measured output voltage is 0.631 V at room temperature.

Keywords

CMOS integrated circuits; energy gap; low-power electronics; operational amplifiers; power amplifiers; 0.5-μm CMOS process; 1-V power supply voltage; 90-dB operational amplifier; CMOS subbandgap reference circuit; Large Δ V_rm BE; POR circuit; amplifier offset; current consumption; output voltage; power-on-reset circuit; resistor trimming; room temperature; subbandgap reference voltages; subthreshold operation techniques; temperature coefficient; threshold voltage reduction; CMOS process; Circuits; Current measurement; Operational amplifiers; Power measurement; Power supplies; Resistors; Temperature; Threshold voltage; Voltage measurement;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2003.820882

Filename

1261310