Microwave performance of GaAs-on-Si MESFETs with Si buffer layers

Author

Georgakilas, Alexandros ; Halkias, George ; Christou, Aris ; Papavassiliou, Christos ; Perantinos, George ; Konstantinidis, George ; Panayotatos, Paul N.

Author_Institution

CALCE, Maryland Univ., College Park, MD, USA

Volume

40

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

507

Lastpage

512

Abstract

The incorporation of silicon-buffer layers is shown to be critical in attaining optimized microwave performance for GaAs on silicon MESFETs. A current gain cutoff frequency (f_t) of 18 GHz and maximum power cutoff frequency (f_max) of 30 GHz is reported for relaxed geometry devices. The low parasitic capacitance and excellent device isolation make this structure suitable for monolithic integration

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor epitaxial layers; semiconductor junctions; silicon; solid-state microwave devices; 18 GHz; 30 GHz; GaAs; GaAs on Si; GaAs-Si; MESFETs; Si buffer layers; Si substrate; current gain cutoff frequency; device isolation; maximum power cutoff frequency; microwave performance; monolithic integration; parasitic capacitance; relaxed geometry devices; semiconductors; Buffer layers; Gallium arsenide; MESFETs; Materials reliability; Molecular beam epitaxial growth; Monolithic integrated circuits; Parasitic capacitance; Photodiodes; Silicon; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.199355

Filename

199355