Title :
GaAs:GaAlAs ridge waveguide lasers and their monolithic integration using the ion beam etching process
Author :
Bouadma, N. ; Correc, Pascal ; Brillouet, François P.
Author_Institution :
CNET, Bagneux, France
fDate :
11/1/1989 12:00:00 AM
Abstract :
The fabrication and performance characteristics of GaAs/GaAlAs ridge waveguide lasers are discussed. Threshold currents as low as 8 mA and differential quantum efficiencies as high as 90% were obtained for 250-μm-long graded-index separate-confinement heterostructure with single quantum well (GRINSCH SQW) lasers. High-speed short-cavity ridge waveguide lasers for which both the ridge stripe and one-mirror facet were formed by Ar-ion beam etching were achieved. The dependence of threshold current and lasing spectra on the cavity length were theoretically and experimentally investigated. This process was successfully used to integrate a laser diode monolithically with a photodiode or a field-effect transistor
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; integrated optics; integrated optoelectronics; laser cavity resonators; optical waveguides; semiconductor junction lasers; sputter etching; 250 micron; 8 mA; 90 percent; Ar; GRINSCH SQW; GaAs-GaAlAs; cavity length; differential quantum efficiencies; fabrication; field-effect transistor; graded-index separate-confinement heterostructure; ion beam etching; laser diode; lasers; lasing spectra; monolithic integration; one-mirror facet; performance characteristics; photodiode; ridge stripe; ridge waveguide lasers; semiconductor laser; short-cavity; single quantum well; threshold current; Diode lasers; Etching; Gallium arsenide; Laser beams; Laser theory; Monolithic integrated circuits; Optical device fabrication; Quantum well lasers; Threshold current; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
