DocumentCode :
863779
Title :
The effect of trench corner shapes on local stress fields: a three-dimensional finite-element modeling study
Author :
Stiffler, Scott R. ; Cifuentes, Arturo O.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
40
Issue :
3
fYear :
1993
fDate :
3/1/1993 12:00:00 AM
Firstpage :
557
Lastpage :
563
Abstract :
Local stress fields associated with deep trench structures are modeled in three dimensions utilizing a finite-element method. A model consisting of a SiO2-filled deep trench residing in a silicon substrate is utilized, and stress is generated by differential thermal contraction. It is shown that corner regions, especially convex, `outside´ corners, dramatically enhance the elastic energy density and shear stresses locally compared to noncorner regions. The effects of the specific corner geometry on these local stress fields is then investigated and it is shown that subtle geometric changes can yield substantial decreases in the magnitude and lateral extent of the fields
Keywords :
VLSI; finite element analysis; integrated circuit technology; silicon compounds; stress analysis; thermal stresses; 3D FEA; SiO2-Si; SiO2-filled deep trench; corner geometry; corner regions; deep trench structures; differential thermal contraction; elastic energy density; finite-element method; geometric changes; local stress fields; noncorner regions; shear stresses; three-dimensional finite-element modeling study; trench corner shapes; trench isolation; Annealing; Circuits; Finite element methods; Geometry; Isolation technology; Shape; Substrates; Temperature; Thermal expansion; Thermal stresses;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.199360
Filename :
199360
Link To Document :
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