• DocumentCode
    863779
  • Title

    The effect of trench corner shapes on local stress fields: a three-dimensional finite-element modeling study

  • Author

    Stiffler, Scott R. ; Cifuentes, Arturo O.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    40
  • Issue
    3
  • fYear
    1993
  • fDate
    3/1/1993 12:00:00 AM
  • Firstpage
    557
  • Lastpage
    563
  • Abstract
    Local stress fields associated with deep trench structures are modeled in three dimensions utilizing a finite-element method. A model consisting of a SiO2-filled deep trench residing in a silicon substrate is utilized, and stress is generated by differential thermal contraction. It is shown that corner regions, especially convex, `outside´ corners, dramatically enhance the elastic energy density and shear stresses locally compared to noncorner regions. The effects of the specific corner geometry on these local stress fields is then investigated and it is shown that subtle geometric changes can yield substantial decreases in the magnitude and lateral extent of the fields
  • Keywords
    VLSI; finite element analysis; integrated circuit technology; silicon compounds; stress analysis; thermal stresses; 3D FEA; SiO2-Si; SiO2-filled deep trench; corner geometry; corner regions; deep trench structures; differential thermal contraction; elastic energy density; finite-element method; geometric changes; local stress fields; noncorner regions; shear stresses; three-dimensional finite-element modeling study; trench corner shapes; trench isolation; Annealing; Circuits; Finite element methods; Geometry; Isolation technology; Shape; Substrates; Temperature; Thermal expansion; Thermal stresses;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.199360
  • Filename
    199360