Title :
Approaching the quantum limit
Author :
Hess, Karl ; Iafrate, G.J.
Author_Institution :
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
The knowledge of the wavelike behavior of electrons that emerges as technology drives semiconductor geometries deeper into the nanometer domain is described. How the underlying size quantization effects restrict the scaling down of device dimensions is explained. Studies underway to explore and understand these phenomena are reviewed. Ways in which they can be exploited in new types of device are explored, alone with the fabrication problems attending such applications.<>
Keywords :
quantum interference devices; quantum interference phenomena; semiconductor technology; electron wavelike behaviour; fabrication; nanometer domain; quantum interference; quantum limit; semiconductor geometries; size quantization effects; Application specific integrated circuits; Electron beams; Integrated circuit technology; Interference; MOSFETs; Quantum mechanics; Silicon; Switches; Temperature; Voltage;
Journal_Title :
Spectrum, IEEE
