DocumentCode
863859
Title
Partitioned-charge-based BJT model using transient charge control relations for arbitrary doping and bias conditions
Author
Parker, James R. ; Roulston, David J. ; Hamel, John Stan
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume
40
Issue
3
fYear
1993
fDate
3/1/1993 12:00:00 AM
Firstpage
605
Lastpage
612
Abstract
Recent transient charge control (TCC) relations such as the TICC or more general GTCC are applied to accurate calculation of base charge partitioning for arbitrary doping profiles and bias conditions. A large-signal BJT circuit model is developed using this approach; both DC and complete first-order AC characteristics are derived from static device simulations
Keywords
bipolar transistors; doping profiles; equivalent circuits; semiconductor device models; transient response; AC characteristics; BJT model; DC characteristics; base charge partitioning; bias conditions; doping profiles; large-signal BJT circuit model; static device simulations; transient charge control relations; Admittance; Capacitance; Control theory; Councils; Delay effects; Doping profiles; Equations; Equivalent circuits; Frequency; Semiconductor process modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.199367
Filename
199367
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