High-frequency 6000 V double-gate GTO´s

Author

Ogura, Tsuneo ; Nakagawa, Akio ; Atsuta, Masaki ; Kamei, Yoshio ; Takigami, Katsuhiko

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

40

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

628

Lastpage

633

Abstract

A double-gate gate turn off (GTO) thyristor, which has an additional gate on the n-base layer, has been proposed to realize high-frequency operation for high-power inverters. The double-gate structure has further been combined with an n-buffer structure to realize narrow n-base width. A forward-blocking voltage of 6000 V was obtained, even at 150°C, when the second gate was shorted to the anode electrode. In order to reduce turn-on and turn-off switching losses, the dependence of these losses on a time interval between two gate triggering pulses has been investigated. It was found that the turn-off loss of approximately 1/20th of that for a conventional GTO thyristor was achieved by adjusting the time interval between the two gate triggering pulses

Keywords

losses; semiconductor switches; thyristors; 150 degC; 6 kV; GTO thyristor; double-gate structure; forward-blocking voltage; gate turnoff device; high-frequency operation; high-power inverters; n-base layer; n-buffer structure; switching losses; Anodes; Electrodes; Frequency; Low voltage; Pulse width modulation inverters; Silicon; Space vector pulse width modulation; Switching loss; Temperature; Thyristors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.199370

Filename

199370