Title :
A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier
Author :
Bakalski, Winfried ; Sogl, Bernhard ; Zannoth, Markus ; Asam, Michael ; Kapfelsperger, Boris ; Berkner, Jörg ; Eisener, Bernd ; Thomann, Wolfgang ; Marcon, Siegfried ; Österreicher, Wilfried ; Napieralska, Ewa ; Rampf, Erwin ; Scholtz, Arpad L. ; Klepser,
Author_Institution :
Infineon Technol., Neubiberg
Abstract :
A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824-915 MHz and 1710-1910 MHz has been realized in a 0.35-mum SiGe-Bipolar technology. The chip integrates two single-ended three-stage power amplifiers and control circuitry for band-select, power loop control and mode dependent quiescent currents. For power control, an on-chip voltage regulation loop is implemented, using an external P-channel MOS-transistor on a laminate module. At 3.3 V a saturated output power of 35.9 dBm is achieved at 830 MHz and 32.3 dBm at 1710 MHz. The respective peak power added efficiency (PAE) is 56% for low-band and 44% for high-band.
Keywords :
UHF power amplifiers; bipolar transistor circuits; cellular radio; voltage control; P-channel MOS-transistor; frequency 1710 MHz to 1910 MHz; frequency 824 MHz to 915 MHz; integrated quad-band GSM/EDGE radio frequency power amplifier; mode dependent quiescent currents; on-chip voltage regulation loop; power loop control; quad-band GSM/EDGE-compliant SiGe-bipolar power amplifier; voltage 3.3 V; Batteries; GSM; Germanium silicon alloys; Impedance matching; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Space technology; Voltage; Amplifiers; HF transmitters; MMIC power amplifiers; SiGe; bipolar analog integrated circuits; cordless telephone systems; impedance matching; inductors; power amplifiers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2008.2002337
