Optically achieved p-i-n diode switch utilizing a two-dimensional laser array at 808 nm as an optical source

Author

Rosen, Arye ; Stabile, Paul J. ; Bechtle, Daniel W. ; Janton, Walter ; Gombar, Anna M. ; McShea, J. ; Rosenberg, A. ; Herczfeld, Peter R. ; Bahasadri, Ali

Author_Institution

David Sarnof Res. Center, Princeton, NJ, USA

Volume

36

Issue

2

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

367

Lastpage

374

Abstract

The design, fabrication, and application of optically activated switches is described. A 0.25-mm-thick Si p-i-n diode, 3.0 mm in diameter, was tested using an 808-nm 2-D diode laser array (measuring about 2 mm×5 mm) as an optical source. Preliminary testing of a 0.25-mm-thick device has demonstrated a holding voltage of 1000 V and a conduction of 10 A upon activation with 200 W of optical power (the pulse width was 10 μs). The same device, while being pulse biased to 2.0 kV, has demonstrated 20-A pulses (100-ns pulse width) with less than 10-ns risetime. The laser peak power was 500 W

Keywords

optoelectronic devices; p-i-n diodes; photodiodes; pulse generators; semiconductor switches; 0.25 mm; 1 to 2 kV; 10 mus to 100 ns; 10 to 20 A; 2-D diode laser array; 200 to 500 W; 3 mm; 5 mm; 808 nm; Si diode switch; optical source; optically activated switches; p-i-n diode switch; two-dimensional laser array; Diode lasers; Optical arrays; Optical design; Optical device fabrication; Optical pulses; Optical switches; P-i-n diodes; Semiconductor laser arrays; Space vector pulse width modulation; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.19938

Filename

19938