DocumentCode :
864004
Title :
Frequency response of the surface inversion layer in silicon
Author :
Zaininger, K.H. ; Warfield, G.
Volume :
52
Issue :
8
fYear :
1964
Firstpage :
971
Lastpage :
972
Keywords :
Capacitance; Delay; Frequency response; Hysteresis; MOS capacitors; Oxidation; Predictive models; Response surface methodology; Semiconductor process modeling; Silicon;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.3196
Filename :
1445126
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=864004
